HN1A01F-Y(TE85L,F)

Toshiba Semiconductor and Storage HN1A01F-Y(TE85L,F)

Part No:

HN1A01F-Y(TE85L,F)

Datasheet:

-

Package:

SC-74, SOT-457

ROHS:

AINNX NO:

6268084-HN1A01F-Y(TE85L,F)

Description:

Trans GP BJT PNP 50V 0.15A 6-Pin US T/R

Products specifications
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Collector-Emitter Breakdown Voltage
    50V
  • Number of Elements
    2
  • hFEMin
    120
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    125°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2014
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    300mW
  • Frequency
    80MHz
  • Polarity
    PNP
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    300mW
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    80MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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