HN1A01FE-Y,LF

Toshiba Semiconductor and Storage HN1A01FE-Y,LF

Part No:

HN1A01FE-Y,LF

Datasheet:

-

Package:

SOT-563, SOT-666

ROHS:

AINNX NO:

6267109-HN1A01FE-Y,LF

Description:

Trans GP BJT PNP 50V 0.15A 6-Pin ES Embossed T/R

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Supplier Device Package
    ES6
  • Collector-Emitter Breakdown Voltage
    50V
  • Current-Collector (Ic) (Max)
    150mA
  • hFEMin
    120
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2014
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    100mW
  • Polarity
    PNP
  • Power - Max
    100mW
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    80MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    80MHz
  • Collector Base Voltage (VCBO)
    -50V
  • Emitter Base Voltage (VEBO)
    -5V
  • Continuous Collector Current
    -150mA
  • Height
    550μm
  • Length
    1.6mm
  • Width
    1.2mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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