GT50JR21(STA1,E,S)

Toshiba Semiconductor and Storage GT50JR21(STA1,E,S)

Part No:

GT50JR21(STA1,E,S)

Datasheet:

-

Package:

TO-3P-3, SC-65-3

AINNX NO:

28812803-GT50JR21(STA1,E,S)

Description:

PB-F IGBT / TRANSISTOR TO-3PN(OS

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    50 A
  • Test Conditions
    -
  • RoHS
    Compliant
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    175°C (TJ)
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    230
  • Input Type
    Standard
  • Power - Max
    230 W
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 50A
  • Continuous Collector Current
    50
  • IGBT Type
    -
  • Current - Collector Pulsed (Icm)
    100 A
  • Td (on/off) @ 25°C
    -
  • Switching Energy
    -
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