All Products
Toshiba America Electronic Components MG15Q2YS9
Part No:
MG15Q2YS9
Manufacturer:
Package:
-
AINNX NO:
69086781-MG15Q2YS9
Category:
Description:
TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Products specifications
- Transistor Element MaterialSILICON
- Part Life Cycle CodeObsolete
- Ihs ManufacturerTOSHIBA CORP
- Package Description,
- Number of Elements2
- ECCN CodeEAR99
- Reach Compliance Codeunknown
- Qualification Status
An indicator of formal certification of qualifications.
Not Qualified - ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)15 A
- Collector-Emitter Voltage-Max1200 V
0 Similar Products Remaining
Hot Sale
GT50J341,Q
Toshiba Semiconductor and StoragePB-F IGBT / TRANSISTOR TO-3PN ICGT20J341,S4X(S
Toshiba Semiconductor and StorageDISCRETE IGBT TRANSISTOR TO-220SGT40RR21(STA1,E
Toshiba Semiconductor and StoragePB-F IGBT / TRANSISTOR TO-3PN ICGT50JR22(STA1,E,S)
Toshiba Semiconductor and StoragePB-F IGBT / TRANSISTOR TO-3PN(OSGT30J341,Q
Toshiba Semiconductor and StorageIGBT TRANS 600V 30A TO3PNGT40WR21,Q
Toshiba Semiconductor and StorageDISCRETE IGBT TRANSISTOR TO-3PN(GT50JR21(STA1,E,S)
Toshiba Semiconductor and StoragePB-F IGBT / TRANSISTOR TO-3PN(OSGT30N135SRA,S1E
Toshiba Semiconductor and StorageD-IGBT TO-247 VCES=1350V IC=30AGT20N135SRA,S1E
Toshiba Semiconductor and StorageD-IGBT TO-247 VCES=1350V IC=40AMG360V1US41
Toshiba America Electronic ComponentsDescription: TRANSISTOR 360 A, 1700 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor