1SS361,LJ(CT

Toshiba Semiconductor and Storage 1SS361,LJ(CT

Part No:

1SS361,LJ(CT

Datasheet:

-

Package:

SC-75, SOT-416

ROHS:

AINNX NO:

5827332-1SS361,LJ(CT

Description:

Diodes - General Purpose, Power, Switching 0.1A 80V High-speed Switching Diode

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-75, SOT-416
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Number of Elements
    2
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2014
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    125°C
  • Min Operating Temperature
    -55°C
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.10.00.70
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    100mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Base Part Number
    1SS361
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Common Cathode
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    500nA @ 80V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 100mA
  • Forward Current

    Current which flows upon application of forward voltage.

    100mA
  • Operating Temperature - Junction
    125°C Max
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    2A
  • Output Current-Max
    0.1A
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.2V
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    100mA
  • Reverse Recovery Time
    4 ns
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    500nA
  • Max Repetitive Reverse Voltage (Vrrm)
    85V
  • Peak Non-Repetitive Surge Current
    2A
  • Diode Configuration
    1 Pair Common Cathode
  • Recovery Time
    4 ns
  • Reverse Voltage (DC)
    80V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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