1SS309(TE85L,F)

Toshiba Semiconductor and Storage 1SS309(TE85L,F)

Part No:

1SS309(TE85L,F)

Datasheet:

-

Package:

SC-74A, SOT-753

ROHS:

AINNX NO:

5964435-1SS309(TE85L,F)

Description:

Diodes - General Purpose, Power, Switching Switching Diode 85V, 200mW

Products specifications
  • Factory Lead Time
    12 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74A, SOT-753
  • Power Dissipation (Max)
    0.2W
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    125°C
  • Min Operating Temperature
    -55°C
  • Base Part Number
    1SS309
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Common Cathode
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    500nA @ 80V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 100mA
  • Forward Current

    Current which flows upon application of forward voltage.

    300mA
  • Operating Temperature - Junction
    125°C Max
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    2A
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    100mA
  • Reverse Recovery Time
    4 ns
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    500nA
  • Max Repetitive Reverse Voltage (Vrrm)
    85V
  • Peak Non-Repetitive Surge Current
    2A
  • Reverse Voltage

    the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at the anode

    85V
  • Diode Configuration
    4 Common Cathode
  • Recovery Time
    4 ns
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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