STS4DPF20L

STMicroelectronics STS4DPF20L

Part No:

STS4DPF20L

Manufacturer:

STMicroelectronics

Datasheet:

Package:

8-SOIC (0.154, 3.90mm Width)

ROHS:

AINNX NO:

6382247-STS4DPF20L

Description:

MOSFET P-Ch 20 Volt 4 Amp

Products specifications
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Mounting Type
    Surface Mount
  • Mount
    Surface Mount
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    125 ns
  • Number of Elements
    2
  • Series
    STripFET™
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • JESD-609 Code
    e4
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    80mOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW THRESHOLD
  • Voltage - Rated DC
    -20V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2W
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    -4A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STS4D
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    2W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    25 ns
  • Power - Max
    1.6W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1350pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    35ns
  • Fall Time (Typ)
    35 ns
  • Continuous Drain Current (ID)
    4A
  • Threshold Voltage
    1.6V
  • Gate to Source Voltage (Vgs)
    16V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    20V
  • Pulsed Drain Current-Max (IDM)
    16A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Width
    4mm
  • Length
    5mm
  • Height
    1.25mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
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