PD85004

STMicroelectronics PD85004

Part No:

PD85004

Manufacturer:

STMicroelectronics

Datasheet:

PD85004

Package:

TO-243AA

ROHS:

AINNX NO:

6093337-PD85004

Description:

RF MOSFET Transistors RF PWR TRANSISTOR

Products specifications
  • Factory Lead Time
    11 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Package / Case
    TO-243AA
  • Mount
    Surface Mount
  • Number of Pins
    8
  • Weight
    130.492855mg
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    6W
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    2A
  • Frequency
    870MHz
  • Base Part Number
    PD85004
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-F3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    6W
  • Case Connection
    SOURCE
  • Current - Test
    50mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    40V
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Continuous Drain Current (ID)
    2A
  • Gate to Source Voltage (Vgs)
    15V
  • Max Output Power

    The maximum output power = the maximum output current × the rated output voltage

    5W
  • Drain Current-Max (Abs) (ID)
    2A
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    16pF
  • Power - Output
    4W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    13.6V
  • Power Gain
    17dB
  • Width
    2.6mm
  • Length
    4.6mm
  • Height
    1.6mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    No SVHC
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