P34F6EL-5600

Shindengen P34F6EL-5600

Part No:

P34F6EL-5600

Manufacturer:

Shindengen

Datasheet:

-

Package:

TO-220-3

AINNX NO:

31210037-P34F6EL-5600

Description:

MOSFET 60V, 34A EETMOS POWER MOSFET

Products specifications
  • Package / Case
    TO-220-3
  • Shipping Restrictions
    This product may require additional documentation to export from the United States.
  • RoHS
    Details
  • Mounting Styles
    Through Hole
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    60 V
  • Id - Continuous Drain Current
    34 A
  • Rds On - Drain-Source Resistance
    9 mOhms
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Vgs th - Gate-Source Threshold Voltage
    2 V
  • Qg - Gate Charge
    41 nC
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Pd - Power Dissipation
    35 W
  • Channel Mode
    Enhancement
  • Forward Transconductance - Min
    12 S
  • Factory Pack QuantityFactory Pack Quantity
    2000
  • Typical Turn-Off Delay Time
    23 ns
  • Typical Turn-On Delay Time
    8 ns
  • Unit Weight
    0.068784 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    21 ns
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