JANTX2N6849

Semicoa Semiconductors JANTX2N6849

Part No:

JANTX2N6849

Datasheet:

Package:

-

AINNX NO:

68734748-JANTX2N6849

Description:

Power Field-Effect Transistor, 6.5A I(D), 100V, 0.32ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Rohs Code
    No
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    SEMICOA CORP
  • Package Description
    HERMETIC SEALED, TO-39, 3 PIN
  • Drain Current-Max (ID)
    6.5 A
  • Number of Elements
    1
  • Package Body Material
    METAL
  • Package Shape
    ROUND
  • Package Style
    CYLINDRICAL
  • JESD-609 Code
    e0
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Reach Compliance Code
    unknown
  • Reference Standard
    MIL-19500
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-205AF
  • Drain-source On Resistance-Max
    0.32 Ω
  • Pulsed Drain Current-Max (IDM)
    25 A
  • DS Breakdown Voltage-Min
    100 V
  • Avalanche Energy Rating (Eas)
    92 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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