JANTX2N6782

Semicoa Semiconductors JANTX2N6782

Part No:

JANTX2N6782

Package:

-

AINNX NO:

68734826-JANTX2N6782

Description:

Description: Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    SEMICOA CORP
  • Package Description
    CYLINDRICAL, O-MBCY-W3
  • Drain Current-Max (ID)
    3.5 A
  • Number of Elements
    1
  • Package Body Material
    METAL
  • Package Shape
    ROUND
  • Package Style
    CYLINDRICAL
  • ECCN Code
    EAR99
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Reach Compliance Code
    unknown
  • Reference Standard
    MIL-19500
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-205AF
  • Drain-source On Resistance-Max
    0.61 Ω
  • Pulsed Drain Current-Max (IDM)
    14 A
  • DS Breakdown Voltage-Min
    100 V
  • Avalanche Energy Rating (Eas)
    68 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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