SSH4N90AS

Samsung Semiconductor SSH4N90AS

Part No:

SSH4N90AS

Package:

-

AINNX NO:

69148750-SSH4N90AS

Description:

Description: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    SAMSUNG SEMICONDUCTOR INC
  • Part Package Code
    TO-3P
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Drain Current-Max (ID)
    4.5 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Turn-off Time-Max (toff)
    215 ns
  • Turn-on Time-Max (ton)
    120 ns
  • ECCN Code
    EAR99
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    3.7 Ω
  • Pulsed Drain Current-Max (IDM)
    18 A
  • DS Breakdown Voltage-Min
    900 V
  • Avalanche Energy Rating (Eas)
    536 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    140 W
  • Feedback Cap-Max (Crss)
    40 pF
  • Power Dissipation Ambient-Max
    140 W
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