IRFR420A

Samsung Semiconductor IRFR420A

Part No:

IRFR420A

Package:

-

AINNX NO:

68718788-IRFR420A

Description:

Power Field-Effect Transistor, 2.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    SAMSUNG SEMICONDUCTOR INC
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Drain Current-Max (ID)
    2.3 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    3 Ω
  • Pulsed Drain Current-Max (IDM)
    8 A
  • DS Breakdown Voltage-Min
    500 V
  • Avalanche Energy Rating (Eas)
    206 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    41 W
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