K4H561638J-HIB3

Samsung Semiconductor K4H561638J-HIB3

Part No:

K4H561638J-HIB3

Datasheet:

-

Package:

-

AINNX NO:

32987156-K4H561638J-HIB3

Description:

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    60
  • Manufacturer Part Number
    K4H561638J-HIB3
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    SAMSUNG SEMICONDUCTOR INC
  • Package Description
    BGA, BGA60,9X12,40/32
  • Risk Rank
    5.84
  • Access Time-Max
    0.7 ns
  • Clock Frequency-Max (fCLK)
    167 MHz
  • Moisture Sensitivity Levels
    1
  • Number of Words
    16777216 words
  • Number of Words Code
    16000000
  • Operating Temperature-Max
    85 °C
  • Operating Temperature-Min
    -40 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Code
    BGA
  • Package Equivalence Code
    BGA60,9X12,40/32
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY
  • Supply Voltage-Nom (Vsup)
    2.5 V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-609 Code
    e3
  • Pbfree Code
    Yes
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    BALL
  • Peak Reflow Temperature (Cel)
    225
  • Terminal Pitch

    The center distance from one pole to the next.

    0.8 mm
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PBGA-B60
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Power Supplies

    an electronic circuit that converts the voltage of an alternating current (AC) into a direct current (DC) voltage.?

    2.5 V
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    INDUSTRIAL
  • Supply Current-Max
    0.27 mA
  • Organization
    16MX16
  • Output Characteristics
    3-STATE
  • Memory Width
    16
  • Standby Current-Max
    0.003 A
  • Memory Density
    268435456 bit
  • I/O Type
    COMMON
  • Memory IC Type
    DDR DRAM
  • Refresh Cycles
    8192
  • Sequential Burst Length
    2,4,8
  • Interleaved Burst Length
    2,4,8
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