IRFW820TM
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69139924-IRFW820TM
SSP1N60A
Samsung SemiconductorPower Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINMMBTH10
Samsung SemiconductorTransistorIRFR420A
Samsung SemiconductorPower Field-Effect Transistor, 2.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3SSH6N55
Samsung SemiconductorPower Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINIRF9222
Samsung SemiconductorTransistorSSD2102
Samsung SemiconductorPower Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8SSU1N60
Samsung SemiconductorPower Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3SFS9510
Samsung SemiconductorPower Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINSSH8N60
Samsung SemiconductorPower Field-Effect Transistor, 8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINSSH8N70
Samsung SemiconductorDescription: Power Field-Effect Transistor, 8A I(D), 700V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN