SH8M14TB

ROHM Semiconductor SH8M14TB

Part No:

SH8M14TB

Manufacturer:

ROHM Semiconductor

Package:

-

AINNX NO:

68724283-SH8M14TB

Description:

Description: Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    2
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    ROHM CO LTD
  • Part Package Code
    SOT
  • Package Description
    SMALL OUTLINE, R-PDSO-G8
  • Drain Current-Max (ID)
    9 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Type of connector
    pin strips
  • Connector
    socket
  • Kind of connector
    female
  • Spatial orientation
    straight
  • Contacts pitch
    2.54mm
  • Electrical mounting
    THT
  • Connector pinout layout
    1x27
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Drain-source On Resistance-Max
    0.028 Ω
  • Pulsed Drain Current-Max (IDM)
    36 A
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    2 W
  • Profile
    beryllium copper
  • Saturation Current
    1
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