EMF32T2R

ROHM Semiconductor EMF32T2R

Part No:

EMF32T2R

Manufacturer:

ROHM Semiconductor

Datasheet:

EMF32,UMF32N

Package:

SOT-563, SOT-666

ROHS:

AINNX NO:

6070721-EMF32T2R

Description:

TRANS DUAL DTA143T/2SK2019 EMT6

Products specifications
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Number of Elements
    1
  • Operating Temperature (Max.)
    150°C
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    50V PNP 30V N Channel
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e3/e2
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN/TIN COPPER
  • Applications
    General Purpose
  • Current Rating (Amps)
    100mA PNP 100mA N-Channel
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    100mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count

    a count of all of the component leads (or pins)

    6
  • Configuration
    SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP Pre-Biased, N-Channel
  • Drain Current-Max (Abs) (ID)
    0.1A
  • Drain-source On Resistance-Max
    8Ohm
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    0.15W
  • Collector Current-Max (IC)
    0.1A
  • DC Current Gain-Min (hFE)
    100
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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