RS1E200AHTB

ROHM Semiconductor RS1E200AHTB

Part No:

RS1E200AHTB

Manufacturer:

ROHM Semiconductor

Datasheet:

Package:

-

AINNX NO:

69164398-RS1E200AHTB

Description:

Power Field-Effect Transistor, 30A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    5
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    ROHM CO LTD
  • Package Description
    HSOP-8
  • Drain Current-Max (ID)
    30 A
  • Moisture Sensitivity Levels
    1
  • Number of Elements
    1
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    10
  • JESD-30 Code
    R-PDSO-F5
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0061 Ω
  • Pulsed Drain Current-Max (IDM)
    80 A
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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