NTD12N10T4G

Rochester Electronics LLC NTD12N10T4G

Part No:

NTD12N10T4G

Package:

-

AINNX NO:

68721568-NTD12N10T4G

Description:

12A, 100V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, LAED FREE, CASE 369C-01, DPAK-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    ROCHESTER ELECTRONICS LLC
  • Package Description
    LAED FREE, CASE 369C-01, DPAK-3
  • Manufacturer Package Code
    CASE 369C-01
  • Drain Current-Max (ID)
    12 A
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • Pbfree Code
    Yes
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    COMMERCIAL
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.165 Ω
  • Pulsed Drain Current-Max (IDM)
    36 A
  • DS Breakdown Voltage-Min
    100 V
  • Avalanche Energy Rating (Eas)
    75 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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