2N5639_Q

Rochester Electronics 2N5639_Q

Part No:

2N5639_Q

Datasheet:

-

Package:

-

AINNX NO:

24639476-2N5639_Q

Description:

Products specifications
  • RoHS
    Non-Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    350 mW
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    350 mW
  • Drain to Source Voltage (Vdss)
    30 V
  • Gate to Source Voltage (Vgs)
    -30 V
  • Drain to Source Breakdown Voltage
    30 V
  • Drain to Source Resistance
    60 Ω
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