2N3819_Q

Rochester Electronics 2N3819_Q

Part No:

2N3819_Q

Datasheet:

-

Package:

-

AINNX NO:

24381731-2N3819_Q

Description:

Products specifications
  • RoHS
    Non-Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    350 mW
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    350 mW
  • Continuous Drain Current (ID)
    50 mA
  • Gate to Source Voltage (Vgs)
    -25 V
  • Drain to Source Breakdown Voltage
    25 V
0 Similar Products Remaining