FPD1050

RF Micro Devices Inc FPD1050

Part No:

FPD1050

Datasheet:

Package:

-

AINNX NO:

69165040-FPD1050

Description:

RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    RF MICRO DEVICES INC
  • Part Package Code
    DIE
  • Package Description
    UNCASED CHIP, R-XUUC-N
  • Number of Elements
    1
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    UNCASED CHIP
  • ECCN Code
    EAR99
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.40
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-XUUC-N
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    10 V
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Highest Frequency Band
    X BAND
  • Power Dissipation Ambient-Max
    3.4 W
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