FPD200P70

RF Micro Devices Inc FPD200P70

Part No:

FPD200P70

Package:

-

AINNX NO:

68722632-FPD200P70

Description:

Description: RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-4

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    GALLIUM ARSENIDE
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    RF MICRO DEVICES INC
  • Package Description
    DISK BUTTON, O-CRDB-F4
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    ROUND
  • Package Style
    DISK BUTTON
  • JESD-609 Code
    e4
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Finish
    GOLD
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.21.00.95
  • Terminal Position
    RADIAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    O-CRDB-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    8 V
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Highest Frequency Band
    K BAND
  • Power Dissipation Ambient-Max
    0.47 W
  • Saturation Current
    1
  • Power Gain-Min (Gp)
    9 dB
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