RJH65T14DPQ-A0#T0

Renesas Electronics America RJH65T14DPQ-A0#T0

Part No:

RJH65T14DPQ-A0#T0

Datasheet:

RJH65T14DPQ-A0

Package:

TO-247-3

ROHS:

AINNX NO:

5837443-RJH65T14DPQ-A0#T0

Description:

IGBT TRENCH 650V 100A TO247A

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Test Conditions
    400V, 50A, 10 Ω, 15V
  • Number of Elements
    1
  • Current-Collector (Ic) (Max)
    100A
  • Published
    2017
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    175°C TJ
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    250W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    250ns
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    68 ns
  • Vce(on) (Max) @ Vge, Ic
    1.75V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    240 ns
  • IGBT Type
    Trench
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    80nC
  • Td (on/off) @ 25°C
    38ns/125ns
  • Switching Energy
    1.3mJ (on), 1.2mJ (off)
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Renesas Electronics America RJH65T14DPQ-A0#T0.