Renesas Electronics America RJH60D2DPP-M0#T2

Factory Lead Time

16 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

300V, 12A, 5 Ω, 15V

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

85 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Published

2012

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

27.2W

Base Part Number

RJH60D

Pin Count

a count of all of the component leads (or pins)

3

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Input Type

Standard

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

32 ns

Power - Max

34W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

25A

Reverse Recovery Time

100 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 12A

IGBT Type

Trench

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

19nC

Td (on/off) @ 25°C

32ns/85ns

Switching Energy

100μJ (on), 160μJ (off)

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free