Renesas Electronics America HAT2199R-EL-E

Factory Lead Time

1 Week

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Supplier Device Package

8-SOP

Number of Terminals

8

Transistor Element Material

SILICON

Continuous Drain Current Id

11

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

11A (Ta)

Mfr

Renesas Electronics America Inc

Power Dissipation (Max)

2W (Ta)

Product Status

Obsolete

Package Description

SMALL OUTLINE, R-PDSO-G8

Package Style

SMALL OUTLINE

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Manufacturer Package Code

PRSP0008DD-D8

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

150 °C

Rohs Code

Yes

Manufacturer Part Number

HAT2199R-EL-E

Package Shape

RECTANGULAR

Manufacturer

Renesas Electronics Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Risk Rank

5.79

Part Package Code

SOP

Drain Current-Max (ID)

11 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C (TJ)

Series

-

Pbfree Code

Yes

ECCN Code

EAR99

Subcategory

FET General Purpose Power

Technology

MOSFET (Metal Oxide)

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

8

JESD-30 Code

R-PDSO-G8

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Brand Name

Renesas

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

16.5mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

1060 pF @ 10 V

Gate Charge (Qg) (Max) @ Vgs

7.5 nC @ 4.5 V

Drain to Source Voltage (Vdss)

30 V

Polarity/Channel Type

N-CHANNEL

Drain Current-Max (Abs) (ID)

11 A

Drain-source On Resistance-Max

0.025 Ω

Pulsed Drain Current-Max (IDM)

88 A

DS Breakdown Voltage-Min

30 V

Channel Type

N

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

2 W

FET Feature

-