Renesas Electronics America Inc RJK1028DNS-00#J5

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-HWSON (3.3x3.3)

Mfr

Renesas Electronics America Inc

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

10W (Ta)

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

8.3 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

10 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 5 V, + 12 V

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

8.8 S

Channel Mode

Enhancement

Manufacturer

Renesas Electronics

Brand

Renesas Electronics

Qg - Gate Charge

3.7 nC

Rds On - Drain-Source Resistance

165 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

4 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Reel

Subcategory

MOSFETs

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

165mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

450 pF @ 10 V

Gate Charge (Qg) (Max) @ Vgs

3.7 nC @ 4.5 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

4.8 ns

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

+12V, -5V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

1 N-Channel

FET Feature

-

Product Category

a particular group of related products.

MOSFET

Width

3.3 mm

Height

0.8 mm

Length

3.3 mm