HAT1127H-EL-E

Renesas Electronics America HAT1127H-EL-E

Part No:

HAT1127H-EL-E

Datasheet:

-

Package:

-

AINNX NO:

29101505-HAT1127H-EL-E

Description:

Pch Single Power MOSFET -30V -40A 4.5mohm LFPAK

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Package Description
    SMALL OUTLINE, R-PSSO-G4
  • Package Style
    SMALL OUTLINE
  • Moisture Sensitivity Levels
    1
  • Package Body Material
    PLASTIC/EPOXY
  • Manufacturer Package Code
    PTZZ0005DA-A5
  • Reflow Temperature-Max (s)
    20
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    HAT1127H-EL-E
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Renesas Electronics Corporation
  • Number of Elements
    1
  • Part Life Cycle Code
    Not Recommended
  • Ihs Manufacturer
    RENESAS ELECTRONICS CORP
  • Risk Rank
    5.31
  • Part Package Code
    LFPAK
  • Drain Current-Max (ID)
    40 A
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    5
  • JESD-30 Code
    R-PSSO-G4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Brand Name
    Renesas
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Drain Current-Max (Abs) (ID)
    40 A
  • Drain-source On Resistance-Max
    0.0077 Ω
  • Pulsed Drain Current-Max (IDM)
    160 A
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    30 W
0 Similar Products Remaining