Renesas Electronics America 2SJ555-E

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Number of Terminals

3

Transistor Element Material

SILICON

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Manufacturer Package Code

PRSS0004ZE-A4

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

150 °C

Rohs Code

Yes

Manufacturer Part Number

2SJ555-E

Package Shape

RECTANGULAR

Manufacturer

Renesas Electronics Corporation

Number of Elements

1

Part Life Cycle Code

Not Recommended

Samacsys Description

2SJ555-E P-Channel MOSFET, 240 A, 60 V, 3-Pin TO-3P Renesas

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Risk Rank

5.21

Part Package Code

TO-3P

Drain Current-Max (ID)

60 A

JESD-609 Code

e2

Pbfree Code

Yes

ECCN Code

EAR99

Terminal Finish

TIN COPPER

Subcategory

Other Transistors

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

4

JESD-30 Code

R-PSFM-T3

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Brand Name

Renesas

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

Transistor Application

SWITCHING

Polarity/Channel Type

P-CHANNEL

Drain Current-Max (Abs) (ID)

60 A

Drain-source On Resistance-Max

0.036 Ω

Pulsed Drain Current-Max (IDM)

240 A

DS Breakdown Voltage-Min

60 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

125 W