TGF3015-SM

Qorvo TGF3015-SM

Part No:

TGF3015-SM

Manufacturer:

Qorvo

Datasheet:

-

Package:

QFN-EP-16

AINNX NO:

31171650-TGF3015-SM

Description:

RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN

Products specifications
  • Package / Case
    QFN-EP-16
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    32 V
  • Vgs - Gate-Source Breakdown Voltage
    - 2.7 V
  • Id - Continuous Drain Current
    557 mA
  • Pd - Power Dissipation
    15.3 W
  • Mounting Styles
    SMD/SMT
  • Development Kit
    TGF3015-SM-EVB1
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    100
  • Part # Aliases
    TGF3015 1120419
  • Unit Weight
    0.237911 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Series
    TGF3015
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    0.03 GHz to 3 GHz
  • Configuration
    Single
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    11 W
  • Transistor Type
    HEMT
  • Gain
    17.1 dB
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