TGF3015-SM

Qorvo TGF3015-SM

Part No:

TGF3015-SM

Manufacturer:

Qorvo

Datasheet:

-

Package:

QFN-EP-16

AINNX NO:

31171650-TGF3015-SM

Description:

RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN

Products specifications
  • Package / Case
    QFN-EP-16
  • Unit Weight
    0.237911 oz
  • Part # Aliases
    TGF3015 1120419
  • Factory Pack QuantityFactory Pack Quantity
    100
  • Moisture Sensitive
    Yes
  • Development Kit
    TGF3015-SM-EVB1
  • Mounting Styles
    SMD/SMT
  • Pd - Power Dissipation
    15.3 W
  • Id - Continuous Drain Current
    557 mA
  • Vgs - Gate-Source Breakdown Voltage
    - 2.7 V
  • Vds - Drain-Source Breakdown Voltage
    32 V
  • Transistor Polarity
    N-Channel
  • RoHS
    Details
  • Series
    TGF3015
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    0.03 GHz to 3 GHz
  • Configuration
    Single
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    11 W
  • Transistor Type
    HEMT
  • Gain
    17.1 dB
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