Qorvo TGF2979-SM

Package / Case

QFN-20

Shipping Restrictions

This product may require additional documentation to export from the United States.

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

32 V

Vgs - Gate-Source Breakdown Voltage

- 2.7 V

Id - Continuous Drain Current

1.8 A

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 225 C

Pd - Power Dissipation

49 W

Mounting Styles

SMD/SMT

Development Kit

TGF2979-SMEVB1

Moisture Sensitive

Yes

Factory Pack QuantityFactory Pack Quantity

50

Part # Aliases

TGF2979 1127378

Unit Weight

0.004339 oz

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tray

Series

TGF2979

Type

GaN SiC HEMT

Operating Frequency

Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

DC to 12 GHz

Configuration

Single

Number of Channels

1 Channel

Output Power

That power available at a specified output of a device under specified conditions of operation.

22 W

Transistor Type

HEMT

Gain

11 dB

Product

RF JFET Transistor

Height

0.203 mm

Length

4 mm

Width

3 mm