TGF2978-SM

Qorvo TGF2978-SM

Part No:

TGF2978-SM

Manufacturer:

Qorvo

Datasheet:

-

Package:

QFN-20

AINNX NO:

30796957-TGF2978-SM

Description:

RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB

Products specifications
  • Package / Case
    QFN-20
  • Shipping Restrictions
    This product may require additional documentation to export from the United States.
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    32 V
  • Vgs - Gate-Source Breakdown Voltage
    - 2.7 V
  • Id - Continuous Drain Current
    1.3 A
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 225 C
  • Pd - Power Dissipation
    33 W
  • Mounting Styles
    SMD/SMT
  • Development Kit
    TGF2978-SMEVB1
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    50
  • Part # Aliases
    TGF2978 1127373
  • Unit Weight
    0.004339 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Series
    TGF2978
  • Type
    GaN SiC HEMT
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    DC to 12 GHz
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    19 W
  • Transistor Type
    HEMT
  • Gain
    11 dB
  • Height
    0.203 mm
  • Length
    4 mm
  • Width
    3 mm
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