QPD1025L

Qorvo QPD1025L

Part No:

QPD1025L

Manufacturer:

Qorvo

Datasheet:

-

Package:

NI-1230-4

AINNX NO:

31129470-QPD1025L

Description:

RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

Products specifications
  • Package / Case
    NI-1230-4
  • RoHS
    Details
  • Id - Continuous Drain Current
    28 A
  • Maximum Drain Gate Voltage
    225 V
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Pd - Power Dissipation
    758 W
  • Mounting Styles
    SMD/SMT
  • Development Kit
    QPD1025LEVB1
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    18
  • Unit Weight
    1.399148 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Series
    QPD1025L
  • Applications
    Avionics, IFF Transponders
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    1 GHz to 1.1 GHz
  • Configuration
    Dual Gate Dual Drain
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    1.5 kW
  • Transistor Type
    HEMT
  • Gain
    22.9 dB
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