QPD1025

Qorvo QPD1025

Part No:

QPD1025

Manufacturer:

Qorvo

Datasheet:

-

Package:

NI-1230-4

AINNX NO:

31131790-QPD1025

Description:

RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN

Products specifications
  • Package / Case
    NI-1230-4
  • RoHS
    Details
  • Transistor Polarity
    Dual N-Channel
  • Id - Continuous Drain Current
    28 A
  • Vds - Drain-Source Breakdown Voltage
    65 V
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Moisture Sensitive
    Yes
  • Pd - Power Dissipation
    685 W
  • Factory Pack QuantityFactory Pack Quantity
    18
  • Vgs - Gate-Source Voltage
    - 2.8 V
  • Mounting Styles
    Flange Mount
  • Rds On - Drain-Source Resistance
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Series
    QPD1025
  • Type
    RF Power MOSFET
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    1 GHz to 1.1 GHz
  • Number of Channels
    2 Channel
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    1.862 kW
  • Gain
    22.5 dB
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