QPD1020SR

Qorvo QPD1020SR

Part No:

QPD1020SR

Manufacturer:

Qorvo

Datasheet:

-

Package:

DFN-8

AINNX NO:

31341533-QPD1020SR

Description:

RF MOSFET Transistors 2.7-3.5GHz 30W Gain 18.4dB

Products specifications
  • Package / Case
    DFN-8
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Id - Continuous Drain Current
    100 mA
  • Vds - Drain-Source Breakdown Voltage
    50 V
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Mounting Styles
    SMD/SMT
  • Moisture Sensitive
    Yes
  • Pd - Power Dissipation
    30 W
  • Factory Pack QuantityFactory Pack Quantity
    100
  • Unit Weight
    0.412264 oz
  • Part # Aliases
    QPD1020
  • Vgs - Gate-Source Voltage
    - 2.8 V
  • Rds On - Drain-Source Resistance
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Series
    QPD1020
  • Type
    RF Small Signal MOSFET
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    2.7 GHz to 3.5 GHz
  • Number of Channels
    1 Channel
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    31 W
  • Gain
    18.4 dB
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