QPD1013SR

Qorvo QPD1013SR

Part No:

QPD1013SR

Manufacturer:

Qorvo

Datasheet:

-

Package:

DFN-6

AINNX NO:

30981328-QPD1013SR

Description:

RF JFET Transistors DC-2.7GHz 150W PAE 64.8%

Products specifications
  • Package / Case
    DFN-6
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Id - Continuous Drain Current
    1.7 A
  • Maximum Drain Gate Voltage
    65 V
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Pd - Power Dissipation
    67 W
  • Mounting Styles
    SMD/SMT
  • Development Kit
    QPD1013EVB01
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    100
  • Part # Aliases
    QPD1013
  • Unit Weight
    0.274843 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Series
    QPD1013
  • Applications
    Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    1.2 GHz to 2.7 GHz
  • Configuration
    Single Triple Drain
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    178 W
  • Transistor Type
    HEMT
  • Gain
    21.8 dB
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