QPD1011SR

Qorvo QPD1011SR

Part No:

QPD1011SR

Manufacturer:

Qorvo

Datasheet:

-

Package:

SMD-8

AINNX NO:

31225632-QPD1011SR

Description:

RF JFET Transistors .03-1.2GHz 7W 50V GaN

Products specifications
  • Package / Case
    SMD-8
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    50 V
  • Vgs - Gate-Source Breakdown Voltage
    145 V
  • Id - Continuous Drain Current
    1.46 A
  • Maximum Drain Gate Voltage
    55 V
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Pd - Power Dissipation
    13 W
  • Mounting Styles
    SMD/SMT
  • Development Kit
    QPD1011EVB01
  • Forward Transconductance - Min
    -
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    100
  • Part # Aliases
    QPD1011
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Series
    QPD1011
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    30 MHz to 1200 MHz
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    8.7 W
  • Transistor Type
    HEMT
  • Gain
    21 dB
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