QPD1011SR

Qorvo QPD1011SR

Part No:

QPD1011SR

Manufacturer:

Qorvo

Datasheet:

-

Package:

SMD-8

AINNX NO:

31225632-QPD1011SR

Description:

RF JFET Transistors .03-1.2GHz 7W 50V GaN

Products specifications
  • Package / Case
    SMD-8
  • Part # Aliases
    QPD1011
  • Factory Pack QuantityFactory Pack Quantity
    100
  • Moisture Sensitive
    Yes
  • Forward Transconductance - Min
    -
  • Development Kit
    QPD1011EVB01
  • Mounting Styles
    SMD/SMT
  • Pd - Power Dissipation
    13 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Minimum Operating Temperature
    - 40 C
  • Maximum Drain Gate Voltage
    55 V
  • Id - Continuous Drain Current
    1.46 A
  • Vgs - Gate-Source Breakdown Voltage
    145 V
  • Vds - Drain-Source Breakdown Voltage
    50 V
  • Transistor Polarity
    N-Channel
  • RoHS
    Details
  • Series
    QPD1011
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    30 MHz to 1200 MHz
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    8.7 W
  • Transistor Type
    HEMT
  • Gain
    21 dB
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