QPD1000SR

Qorvo QPD1000SR

Part No:

QPD1000SR

Manufacturer:

Qorvo

Datasheet:

-

Package:

QFN-8

AINNX NO:

31085970-QPD1000SR

Description:

RF JFET Transistors .03-1.215GHz,15W,28V GaN RF I/P-Mtchd T

Products specifications
  • Package / Case
    QFN-8
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    100 V
  • Id - Continuous Drain Current
    3 A
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Pd - Power Dissipation
    32.4 W
  • Mounting Styles
    SMD/SMT
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    100
  • Vgs th - Gate-Source Threshold Voltage
    - 7 V, + 2 V
  • Part # Aliases
    QPD1000 1131140
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Series
    QPD1000
  • Applications
    Military Radar, Jammers
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    30 MHz to 1.215 GHz
  • Configuration
    Single
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    24 W
  • Transistor Type
    HEMT
  • Gain
    19 dB
0 Similar Products Remaining