PSMB033N10NS2_R2_00201

Panjit PSMB033N10NS2_R2_00201

Part No:

PSMB033N10NS2_R2_00201

Manufacturer:

Panjit

Package:

TO-263AB-3

AINNX NO:

69146710-PSMB033N10NS2_R2_00201

Description:

MOSFETs 100V/ 3.3mohms / TO-263AB for Industrail market

Products specifications
  • Package / Case
    TO-263AB-3
  • RoHS
    RoHS Compliant
  • Mounting Styles
    Through Hole
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    100 V
  • Id - Continuous Drain Current
    219 A
  • Rds On - Drain-Source Resistance
    3.3 mOhms
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Vgs th - Gate-Source Threshold Voltage
    3.8 V
  • Qg - Gate Charge
    65 nC
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Pd - Power Dissipation
    333 W
  • Channel Mode
    Enhancement
  • Fall Time
    4.9 ns
  • Factory Pack Quantity
    800
  • Typical Turn-Off Delay Time
    24.7 ns
  • Typical Turn-On Delay Time
    15.5 ns
  • Unit Weight
    0.049384 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    4.9 ns
  • Transistor Type
    1 N-Channel
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