PJD50N15S-AU_L2_006A1

Panjit PJD50N15S-AU_L2_006A1

Part No:

PJD50N15S-AU_L2_006A1

Manufacturer:

Panjit

Package:

TO-252AA-2

AINNX NO:

69146245-PJD50N15S-AU_L2_006A1

Description:

MOSFETs 150V N-Channel Enhancement Mode MOSFET

Products specifications
  • Package / Case
    TO-252AA-2
  • RoHS
    RoHS Compliant
  • Mounting Styles
    SMD/SMT
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    150 V
  • Id - Continuous Drain Current
    65 A
  • Rds On - Drain-Source Resistance
    16 mOhms
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Vgs th - Gate-Source Threshold Voltage
    4 V
  • Qg - Gate Charge
    53 nC
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Pd - Power Dissipation
    167 W
  • Channel Mode
    Enhancement
  • Qualification
    AEC-Q101
  • Fall Time
    14 ns
  • Factory Pack Quantity
    3000
  • Typical Turn-Off Delay Time
    37 ns
  • Typical Turn-On Delay Time
    13 ns
  • Part # Aliases
    PJD50N15S
  • Unit Weight
    0.011348 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    15 ns
  • Transistor Type
    1 N-Channel
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