PJX8838_R1_00001

Panjit PJX8838_R1_00001

Part No:

PJX8838_R1_00001

Manufacturer:

Panjit

Datasheet:

-

Package:

SOT-563, SOT-666

AINNX NO:

42563111-PJX8838_R1_00001

Description:

50V N-CHANNEL ENHANCEMENT MODE M

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    SOT-563
  • MSL
    n/a
  • Dimensions
    5,0x2,5mm
  • Insulation Voltage
    500 V
  • RoHS
    Yes
  • Package
    Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
  • Current - Continuous Drain (Id) @ 25℃
    360mA (Ta)
  • Mfr
    Panjit International Inc.
  • Product Status
    Active
  • Vds - Drain-Source Breakdown Voltage
    50 V
  • Vgs th - Gate-Source Threshold Voltage
    1 V
  • Pd - Power Dissipation
    300 mW
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Minimum Operating Temperature
    - 55 C
  • Mounting Styles
    SMD/SMT
  • Channel Mode
    Enhancement
  • Qg - Gate Charge
    950 pC
  • Rds On - Drain-Source Resistance
    6 Ohms
  • Id - Continuous Drain Current
    360 mA
  • Series
    n/a
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Tolerance
    ±5 %
  • Resistance
    680.0 kOhm
  • Composition
    Thick Film
  • Technology
    Si
  • Note
    n/a
  • Number of Channels
    2 Channel
  • Power - Max
    300mW (Ta)
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    1.45Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    36pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    0.95nC @ 4.5V
  • Size
    2010
  • Drain to Source Voltage (Vdss)
    50V
  • FET Feature
    Standard
  • Rated Power
    0,75 W
  • Height
    0,55 mm
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