2N7002KTB-R1-00001

PANJIT International 2N7002KTB-R1-00001

Part No:

2N7002KTB-R1-00001

Datasheet:

-

Package:

SOT-523-3

AINNX NO:

28097876-2N7002KTB-R1-00001

Description:

SOT-523 MOSFETs ROHS

Products specifications
  • Package / Case
    SOT-523-3
  • Mounting Type
    Surface Mount
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Supplier Device Package
    SOT-523 Flat Leads
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Vds - Drain-Source Breakdown Voltage
    60 V
  • Typical Turn-On Delay Time
    20 ns
  • Vgs th - Gate-Source Threshold Voltage
    2.5 V
  • Pd - Power Dissipation
    200 mW
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Unit Weight
    0.000071 oz
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    4000
  • Mounting Styles
    SMD/SMT
  • Channel Mode
    Enhancement
  • Manufacturer
    Panjit
  • Brand
    Panjit
  • Qg - Gate Charge
    800 pC
  • Rds On - Drain-Source Resistance
    4 Ohms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    125 ns
  • Id - Continuous Drain Current
    115 mA
  • Package
    Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
  • Current - Continuous Drain (Id) @ 25℃
    115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Mfr
    Panjit International Inc.
  • Power Dissipation (Max)
    200mW (Ta)
  • Product Status
    Active
  • Drain Current-Max (ID)
    0.115 A
  • Risk Rank
    5.55
  • Ihs Manufacturer
    PAN JIT INTERNATIONAL INC
  • Part Life Cycle Code
    Active
  • Number of Elements
    1
  • Package Shape
    RECTANGULAR
  • Manufacturer Part Number
    2N7002KTB_R1_00001
  • Rohs Code
    Yes
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package Body Material
    PLASTIC/EPOXY
  • Package Style
    SMALL OUTLINE
  • Package Description
    SMALL OUTLINE, R-PDSO-F3
  • Series
    NFET-035TB
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    MouseReel
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    ULTRA LOW RESISTANCE
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PDSO-F3
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    35 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs
    0.8 nC @ 4.5 V
  • Drain to Source Voltage (Vdss)
    60 V
  • Vgs (Max)
    ±20V
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • Transistor Type
    1 N-Channel
  • Drain-source On Resistance-Max
    3 Ω
  • DS Breakdown Voltage-Min
    60 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    -
  • Feedback Cap-Max (Crss)
    5 pF
  • Product Category

    a particular group of related products.

    MOSFET
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