Panjit PJX138K_R1_00001

Package / Case

SOT-563-6

Mounting Type

Surface Mount

Supplier Device Package

SOT-563

Material

AL

Material Finish

Black Anodized

RoHS

Yes

Designed for

BGA

Vds - Drain-Source Breakdown Voltage

50 V

Typical Turn-On Delay Time

2.2 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

223 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

630 pC

Rds On - Drain-Source Resistance

4.5 Ohms

Typical Turn-Off Delay Time

6.2 ns

Id - Continuous Drain Current

350 mA

Current - Continuous Drain (Id) @ 25℃

350mA (Ta)

Mfr

Panjit International Inc.

Product Status

Active

Series

ICKBGA

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

MouseReel

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Subcategory

MOSFETs

Technology

Si

Configuration

Dual

Note

-

Number of Channels

2 Channel

Power - Max

223mW (Ta)

FET Type

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

1nC @ 4.5V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

19.2 ns

Drain to Source Voltage (Vdss)

50V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

2 N-Channel

FET Feature

Standard

Product Category

a particular group of related products.

MOSFET