PJT138K-AU_R1_000A1

Panjit PJT138K-AU_R1_000A1

Part No:

PJT138K-AU_R1_000A1

Manufacturer:

Panjit

Datasheet:

-

Package:

6-TSSOP, SC-88, SOT-363

AINNX NO:

39703768-PJT138K-AU_R1_000A1

Description:

MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    SOT-363
  • Vds - Drain-Source Breakdown Voltage
    50 V
  • Vgs th - Gate-Source Threshold Voltage
    1.5 V
  • Qualification
    AEC-Q101
  • Pd - Power Dissipation
    236 mW
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Unit Weight
    0.000280 oz
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    3000
  • Mounting Styles
    SMD/SMT
  • Channel Mode
    Enhancement
  • Manufacturer
    Panjit
  • Brand
    Panjit
  • Qg - Gate Charge
    630 pC
  • Rds On - Drain-Source Resistance
    1.6 Ohms
  • RoHS
    Details
  • Id - Continuous Drain Current
    360 mA
  • Current - Continuous Drain (Id) @ 25℃
    360mA (Ta)
  • Mfr
    Panjit International Inc.
  • Product Status
    Active
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    MouseReel
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Number of Channels
    1 Channel
  • Power - Max
    236mW (Ta)
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    1nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    50V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • FET Feature
    Standard
  • Product Category

    a particular group of related products.

    MOSFET
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