2N7002PW

NXP USA Inc. 2N7002PW

Part No:

2N7002PW

Manufacturer:

NXP USA Inc.

Datasheet:

-

Package:

-

AINNX NO:

29621942-2N7002PW

Description:

TRANSISTOR 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET General Purpose Small Signal

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Package Description
    SMALL OUTLINE, R-PDSO-G3
  • Package Style
    SMALL OUTLINE
  • Moisture Sensitivity Levels
    1
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Min
    -55 °C
  • Reflow Temperature-Max (s)
    30
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    2N7002PW
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Nexperia
  • Number of Elements
    1
  • Part Life Cycle Code
    Not Recommended
  • Samacsys Description
    Trench MOSFET,N channel 60V,310mA SOT323 NXP 2N7002PW N-channel MOSFET Transistor, 0.31 A, 60 V, 3-Pin SOT-323
  • Ihs Manufacturer
    NEXPERIA
  • Risk Rank
    5.15
  • Drain Current-Max (ID)
    0.31 A
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOGIC LEVEL COMPATIBLE
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    1.6 Ω
  • DS Breakdown Voltage-Min
    60 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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