NXP Semiconductors PESD5V0L5UK,132

Lifecycle Status

Obsolete (Last Updated: 1 month ago)

Mount

Surface Mount

Number of Pins

6

Weight

4.535924 g

Breakdown Voltage / V

6.47 V

Case/Package

SOT-891

Reverse Stand-off Voltage

5 V

RoHS

Compliant

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape and Reel

Termination

SMD/SMT

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Composition

Zener

Capacitance

22 pF

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

30 W

Depth

1.05 mm

Working Voltage

5 V

Polarity

Unidirectional

Number of Channels

5

Leakage Current

500 nA

Power Line Protection

During fault, the only circuit breaker closest to the fault point should be tripped. The operating time of relay associated with protection of line should be as minimum as possible in order to prevent unnecessary tripping of circuit breakers associated with other healthy parts of power system.

No

Clamping Voltage

9.9 V

Peak Pulse Current

The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

3.1 A

Max Surge Current

Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

3.1 A

Peak Pulse Power

30 W

Direction

Unidirectional

Max Breakdown Voltage

7.14 V

Number of Unidirectional Channels

5

Min Breakdown Voltage

6.47 V

Height

6.35 mm

Length

1.05 mm

Width

6.35 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

REACH SVHC

No SVHC

Lead Free

Lead Free