PESD12VV1BL

NXP Semiconductors PESD12VV1BL

Part No:

PESD12VV1BL

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

69817756-PESD12VV1BL

Category:

Accessories

Description:

Very Low Capacitance ESD Protection Diode Bi-Directional 30kV 2-Pin DFN

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    2
  • Case/Package
    DFN
  • Reverse Stand-off Voltage
    12 V
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Max Reverse Leakage Current
    10 nA
  • Clamping Voltage
    38 V
  • Peak Pulse Current

    The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

    7.8 A
  • Peak Pulse Power
    290 W
  • Direction
    Bidirectional
  • Test Current
    5 mA
  • ESD Protection
    Yes
  • Min Breakdown Voltage
    14.6 V
  • Height
    500 µm
  • Length
    1.02 mm
  • Width
    620 µm
  • REACH SVHC
    No SVHC
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