PIP3117-B,118

NXP PIP3117-B,118

Part No:

PIP3117-B,118

Manufacturer:

NXP

Datasheet:

-

Package:

-

AINNX NO:

36624513-PIP3117-B,118

Description:

Products specifications
  • Lifecycle Status
    Obsolete (Last Updated: 2 weeks ago)
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Number of Pins
    3
  • Weight
    749.986634 mg
  • Voltage, Rating
    13 V
  • Voltage Rating (DC)
    13 V
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Box (TB)
  • Tolerance
    5 %
  • Number of Terminations
    2
  • Termination
    Axial
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    -80 ppm/°C
  • Resistance
    5.6 Ω
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200 °C
  • Min Operating Temperature
    -40 °C
  • Composition
    Wirewound
  • Power Rating
    3 W
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    3 W
  • Military Standard
    Not
  • Features
    Flame Retardant Coating
  • Width
    4.8 mm
  • Length
    13 mm
  • Diameter
    4.8 mm
  • Thickness
    4.8 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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