PMGD175XN,115

NXP USA Inc. PMGD175XN,115

Part No:

PMGD175XN,115

Manufacturer:

NXP USA Inc.

Datasheet:

PMGD175XN

Package:

6-TSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

6826603-PMGD175XN,115

Description:

MOSFET 2N-CH 30V 0.9A 6TSSOP

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Transistor Element Material
    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    900mA
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Pin Count

    a count of all of the component leads (or pins)

    6
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power - Max
    390mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    225m Ω @ 1A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    75pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    1.1nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drain Current-Max (Abs) (ID)
    0.9A
  • Drain-source On Resistance-Max
    0.225Ohm
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    0.905W
  • FET Feature
    Logic Level Gate
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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