UPA1552BH

NEC UPA1552BH

Part No:

UPA1552BH

Manufacturer:

NEC

Datasheet:

-

Package:

-

AINNX NO:

28924630-UPA1552BH

Description:

Power Field-Effect Transistor, 5A I(D), 60V, 0.24ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    10
  • Transistor Element Material
    SILICON
  • Package Description
    IN-LINE, R-PSIP-T10
  • Package Style
    IN-LINE
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    No
  • Manufacturer Part Number
    UPA1552BH
  • Package Shape
    RECTANGULAR
  • Manufacturer
    NEC Electronics Group
  • Number of Elements
    4
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    NEC ELECTRONICS CORP
  • Risk Rank
    5.39
  • Drain Current-Max (ID)
    5 A
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    10
  • JESD-30 Code
    R-PSIP-T10
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.24 Ω
  • Pulsed Drain Current-Max (IDM)
    20 A
  • DS Breakdown Voltage-Min
    60 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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